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64K 8bit可擦可编程只读存储器 EEPROM芯片24C64

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  • Two-Wire Serial EEPROM

    32K, 64K (8-bit wide)

    FEATURES

    Low voltage and low power operations:

    AT24C32N/64N: VCC = 1.8V to 5.5V

    Maximum Standby current < 1μA (typically 0.02μA and 0.06μA @ 1.8V and 5.5V respectively).

    32 bytes page write mode.

    Partial page write operation allowed.

    Internally organized: 4,096 × 8 (32K), 8,192 × 8 (64K).

    Standard 2-wire bi-directional serial interface.

    Schmitt trigger, filtered inputs for noise protection.

    Self-timed Write Cycle (5ms maximum).

    800 kHz (5V), 400 kHz (1.8V, 2.5V, 2.7V) Compatibility.

    Automatic erase before write operation.

    Write protect pin for hardware data protection.

    High reliability: typically 1, 000,000 cycles endurance.

    100 years data retention.

    Industrial temperature range (-40 to 85).

    Standard 8-lead DIP/SOP/TSSOP/DFN and 5-lead SOT23/TSOT23 Pb-free packages.

       The AT24C32N/64N series are 32,768/65,536 bits of serial Electrical Erasable and Programmable Read Only Memory,

    commonly known as EEPROM. They are organized as 4096/8192 words of 8 bits (one byte) each. The devices are

    fabricated with proprietary advanced CMOS process for low power and low voltage applications. These devices are available

    in standard 8-lead DIP, 8-lead SOP, 8-lead TSSOP, 5-lead SOT23, and 5-lead TSOT23 packages. A standard 2-wire serial

    interface is used to address all read and write functions. Our extended VCC range (1.8V to 5.5V) devices enables wide

    spectrum of applications.


    24c64.pdf 规格书


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