32K 8bit可擦可编程只读存储器 EEPROM芯片24C32

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Two-Wire Serial EEPROM

32K, 64K (8-bit wide)

FEATURES

Low voltage and low power operations:

AT24C32N/64N: VCC = 1.8V to 5.5V

Maximum Standby current < 1μA (typically 0.02μA and 0.06μA @ 1.8V and 5.5V respectively).

32 bytes page write mode.

Partial page write operation allowed.

Internally organized: 4,096 × 8 (32K), 8,192 × 8 (64K).

Standard 2-wire bi-directional serial interface.

Schmitt trigger, filtered inputs for noise protection.

Self-timed Write Cycle (5ms maximum).

800 kHz (5V), 400 kHz (1.8V, 2.5V, 2.7V) Compatibility.

Automatic erase before write operation.

Write protect pin for hardware data protection.

High reliability: typically 1, 000,000 cycles endurance.

100 years data retention.

Industrial temperature range (-40℃ to 85℃).

Standard 8-lead DIP/SOP/TSSOP/DFN and 5-lead SOT23/TSOT23 Pb-free packages.

The AT24C32N/64N series are 32,768/65,536 bits of serial Electrical Erasable and Programmable Read Only Memory,

commonly known as EEPROM. They are organized as 4096/8192 words of 8 bits (one byte) each. The devices are

fabricated with proprietary advanced CMOS process for low power and low voltage applications. These devices are available

in standard 8-lead DIP, 8-lead SOP, 8-lead TSSOP, 5-lead SOT23, and 5-lead TSOT23 packages. A standard 2-wire serial

interface is used to address all read and write functions. Our extended VCC range (1.8V to 5.5V) devices enables wide

spectrum of applications.

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